Phys Rev Lett 2001, 87:146803.A-1210477 solubility dmso CrossRef 7. Ono T, Ota MCC 950 T, Egami Y: Fully spin-dependent transport of triangular graphene flakes. Phys Rev B 2011, 84:224424.CrossRef 8. Hohenberg P, Kohn W: Inhomogeneous electron gas. Phys Rev 1964, 136:B864-B871.CrossRef
9. Hirose K, Ono T, Fujimoto Y, Tsukamoto S: First-Principles Calculations in Real-Space Formalism. London: Imperial College Press; 2005. 10. Ono T, Hirose K: Timesaving double-grid method for real-space electronic-structure calculations. Phys Rev Lett 1999, 82:5016–5019.CrossRef 11. Hirose K, Ono T: Direct minimization to generate electronic states with proper occupation numbers. Phys Rev B 2001, 64:085105.CrossRef 12. Kobayashi K: Norm-conserving pseudopotential database (NCPS97). Comput Mater Sci 1999, 14:72–76.CrossRef 13. Troullier N, Martins JL: Efficient pseudopotentials for plane-wave calculations. Phys Rev B 1991, 43:1993–2006.CrossRef 14. Perdew JP, Zunger A: Self-interaction correction to density-functional approximations for many-electron systems. Phys Rev B 1981, 23:5048–5079.CrossRef 15. Fujimoto HDAC phosphorylation Y, Hirose K: First-principles calculation method of electron-transport properties of metallic nanowires. Nanotechnol 2003, 14:147.CrossRef 16. Fujimoto Y,
Hirose K: First-principles treatments of electron transport properties for nanoscale junctions. Phys Rev B 2003, 67:195315.CrossRef 17. Büttiker M, Imry Y, Landauer R, Pinhas S: Generalized many-channel conductance formula with application to small rings. PD184352 (CI-1040) Phys Rev B 1985, 31:6207–6215.CrossRef 18. Kokado S, Fujima N, Harigaya K, Shimizu H, Sakuma A: Theoretical analysis of highly spin-polarized transport in the iron nitride Fe4N. Phys Rev B 2006, 73:172410.CrossRef Competing interests The authors declare that they have no competing interests. Authors’ contributions TO (T Ota) carried out preliminary calculations and drifted the manuscript.
TO (T Ono) developed the computational code, implemented the calculations, and completed the manuscript. Both authors read and approved the final manuscript.”
“Background Plasma-enhanced chemical vapor deposition (PECVD) is an important and widely used process for forming various kinds of thin films in the electronics industry to fabricate, for example, very-large-scale integration and solar cells. For PECVD, capacitively coupled plasma (CCP) has the advantage of generating the large-area plasma necessary to process large substrates. However, when the electrodes become large relative to the wavelength of the electromagnetic wave used to generate the plasma, the standing wave effect will become significant, deteriorating the uniformity of the film thickness obtained [1–5]. It is considered that the voltage distribution over the CCP electrode greatly affects not only the distribution of plasma characteristics, such as plasma density and electron temperature, but also the deposited film thickness uniformity, especially in the case of PECVD.