Nano Lett 2011,11(6):2311–2317.CrossRef 6. Alonso-Álvarez D, Taboada AG, Ripalda JM, Alén B, González Y, González L, García JM, Briones F, Martí A, Luque A, Sánchez this website AM, Molina SI: Carrier recombination effects in strain compensated quantum dot stacks embedded in solar cells. Appl Phys Lett 2008,93(12):123114.CrossRef
7. Zhou D, Sharma G, Thomassen SF, Reenaas TW, Fimland BO: Optimization towards high density quantum dots for intermediate band solar cells grown by molecular beam epitaxy. Appl Phys Lett 2010,96(6):061913.CrossRef 8. Wu J, Shao D, Li Z, Manasreh MO, Kunets VP, Wang ZM, Salamo GJ: Intermediate-band material based on GaAs quantum rings for solar cells. Appl Phys Lett 2009,95(7):071908.CrossRef 9. Wu J, Wang ZM, Dorogan VG, Li S, Zhou Z, Li H, Lee J, Kim ES, Mazur YI, Salamo GJ: Strain-free ring-shaped nanostructures by droplet
epitaxy for photovoltaic application. Appl Phys Lett 2012, 101:043904.CrossRef 10. Jo M, Mano T, Sakoda K: Lasing in ultra-narrow emission from GaAs quantum dots coupled with a two-dimensional layer. Nanotechnology 2011,22(33):335201.CrossRef 11. Wu J, Shao D, Dorogan VG, Li AZ, Li S, DeCuir EA, Manasreh MO, Wang ZM, Mazur YI, Salamo GJ: Intersublevel infrared photodetector with strain-free GaAs quantum dot pairs grown by high-temperature droplet PLX4032 mouse epitaxy. Nano Lett 2010,10(4):1512–1516.CrossRef 12. Jolley G, McKerracher I, Fu L, Tan HH, Jagadish C: The conduction band absorption spectrum of interdiffused InGaAs/GaAs quantum dot infrared photodetectors. J Appl Phys 2012,111(12):123719.CrossRef 13. Pankratov EL: Optimization of pulse laser annealing to increase sharpness of implanted-junction Idoxuridine rectifier in semiconductor heterostructure. Nano-Micro Lett 2010, 2:256–267. 14. Martí A, Antolín E, Linares PG, Luque A: Understanding experimental characterization of intermediate band solar
cells. J Mater Chem 2012, 22:22832–22839.CrossRef 15. Hsu TM, Lan YS, Chang W, Yeh NT, Chyi J: Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing. Appl Phys Lett 2000,76(6):691.CrossRef 16. Fu L, McKerracher I, Tan HH, Jagadish C, Vukmirovic N, Harrison P: Effect of GaP strain compensation layers on rapid thermally annealed InGaAs/GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition. Appl Phys Lett 2007,91(7):073515.CrossRef 17. Pierz K, Ma Z, Keyser UF, Haug RJ: Kinetically limited quantum dot formation on AlAs(100) surfaces. J Cryst Growth 2003,249(3–4):477–482.CrossRef 18. Sanguinetti S, Watanabe K, Kuroda T, Minami F, Gotoh Y, Koguchi N: Effects of post-growth annealing on the optical properties of self-assembled GaAs/AlGaAs quantum dots. J Cryst Growth 2002,242(3–4):321–331.CrossRef Competing interests The authors declare that they have no competing interests.