5G illumination using the BQP method The calculated solar cell p

5G illumination using the BQP method. The selleck inhibitor calculated solar cell parameters are shown in Table 3. Also, the calculated quantum efficiencies are shown in Figure 7. The simulated quantum efficiencies are

multiplied by 0.12 for comparison with the experimental one. The calculated short-circuit current densities (J sc) and quantum efficiencies are much higher than those of the experimental results. There are two possible reasons. The first reason is due to the difference of the doping concentration in a Si-QDSL layer. In an actual solar cell, the phosphorus concentration in the Si-QDSL absorber layer is more than 1 × 1019 cm-3 due to the high-temperature annealing process [34]. From the simulations, the J sc and the quantum efficiency in the whole wavelength region becomes lower if the phosphorus concentration in the Si-QDSL layer increases. The phosphorus in the Si-QDSL layer degrades the J sc due to the reduction of the electrical TH-302 in vivo field in the Si-QDSL layer. Unfortunately, simulations were not possible when the dopant concentration in the Si-QDSL was higher than 1 × 1017 cm-3 due to the convergence problem of the BQP calculations. It is expected that J sc will decrease more if the dopant concentration becomes higher. We previously reported that the quantum efficiency Ilomastat supplier in the whole wavelength region decreases as the dopant concentration in the Si-QDSL increases from experiments and the simulations using classical model [35], which is similar to

the results of the BQP method. The second reason is due to the optical losses in the n-type poly-Si layer. In this calculation, the surface roughness of the textured quartz substrate was not taken into account. The effective optical path length in the n-type layer of the simulated structure should be shorter than that of the actual solar cell structure. As a result, the simulated quantum efficiency in the short-wavelength region is higher than that of the experimental because of the low optical absorption loss in the n-type poly-Si layer. Even though the J sc mismatch, the absorption edge can be estimated from the simulated quantum efficiency. The calculated quantum efficiencies

at the long-wavelength region are in agreement with those of the experimental one. This suggests that the absorption edge of the solar cell can be theoretically reproduced using this simulation. Moreover, the absorption edge was estimated 17-DMAG (Alvespimycin) HCl to be 1.49 eV, which is quite similar to the absorption edge of the Si-QDSL estimated from the optical measurements. This indicates that the photogeneration in the Si-QDSL solar cell is thought to be the contribution from Si-QDs, and it is possible to fabricate the solar cells with silicon nanocrystal materials, whose bandgaps are wider than that of a crystalline silicon. Conclusions The fundamental optical properties of Si-QDSLs were investigated, and the solar cell structure using the Si-QDSL as an absorber layer was fabricated and characterized.

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